Semiconductor laser device
文献类型：专利
| 作者 | YOSHIZAWA MISUZU; ONO YUICHI |
| 发表日期 | 1990-08-14 |
| 专利号 | JP1990205089A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent fusion of a high light density part at the end face by constituting the crystal at the end face part out of material which is transparent to laser beams. CONSTITUTION:The part in the resonator direction is composed of an end face window area 13 and a laser oscillation area 12. An n-type GaAs substrate crystal 1 is etched so as to form a mesa of Ww in width, Lw in length in resonator direction, and h in height at an end face window area. Next, on this n-type GaAs substrate crystal 1, an n-type Al0.37Ga0.63As first clad layer 2, an n-type Al0.20Ga0.80As light guide layer 3, an n-type Al0.37Ga0.63As second clad layer 4, an Al0.06Ga0.94As active layer 5, a p-type Al0.37Ga0.63As first clad layer 6, and an n-type GaAs current constriction layer 7 are formed in order by MOCVD method. Next, only at a laser oscillation area 12 the n-type GaAs current constriction layer 7 is removed completely, and the groove stripe to expose the surface of the p-type Al0.37Ga0.63As second clad layer 6 is formed. |
| 公开日期 | 1990-08-14 |
| 申请日期 | 1989-02-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87742]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YOSHIZAWA MISUZU,ONO YUICHI. Semiconductor laser device. JP1990205089A. 1990-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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