External resonance type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SAITO HIDEHO; IMAMURA YOSHIHIRO |
| 发表日期 | 1989-07-26 |
| 专利号 | JP1989186692A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | External resonance type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To make a monolithic semiconductor laser compact and improve its stability and reliability as well, by causing a diffraction grating reflector and a semiconductor laser to be incorporated in the monolithic form. CONSTITUTION:A laser part 11 has a stripe-like, active region 14 and an external reflecting mirror 13 with a diffraction grating provided with a plurality of grooves 17 on its slant-face. They are isolated electrically by an isolating groove 12 having both side faces consisting of one of end faces as well as a slant face of the laser part 11 and are formed at the same substrate One of the end faces of laser part 11 is vertical to the stripe-like active region 14 as well as the surface 15 of the substrate 1 and the slant face is formed at an angle with respect to the surface 15 of the substrate. The direction of the grooves 17 of the diffraction grating is vertical to the stripe-like active region 14; besides, it is in parallel to the surface 15 of the substrate. As the reflecting mirror 13 with the diffraction grating and the semiconductor laser 11 are incorporated in the monolithic form, such a structure makes this element compact and improves stability and reliability as well. |
| 公开日期 | 1989-07-26 |
| 申请日期 | 1988-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87749]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SAITO HIDEHO,IMAMURA YOSHIHIRO. External resonance type semiconductor laser and manufacture thereof. JP1989186692A. 1989-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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