Semiconductor laser device
文献类型：专利
| 作者 | FURUYAMA HIDETO; NAKAMURA MASARU |
| 发表日期 | 1991-06-20 |
| 专利号 | JP1991145177A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable a semiconductor laser device to operate in a high speed region and to be densely mounted in parallel by a method wherein electrical connection and optical coupling are made through a transmission line and an optical waveguide path respectively and optimized. CONSTITUTION:A semiconductor laser 5 and a photodiode 6 are mounted on a heat dissipating plate 4 and fixed, and a dielectric board 1 whose rear side is metallized is also mounted on the heat dissipating plate 4 and fixed. An electric signal is inputted into a terminal A, propagates on a transmission line 2, and inputted into a semiconductor laser 5 through a bonding wire 7. At this point, the characteristic impedance of the transmission line 2 and an input line are combined together, whereby the inputted power is restrained from being reflected at a coupler to the transmission line 2. The semiconductor laser 5 generates and emits an optical signal in accordance with the inputted electrical signal, when it emits the same optical signal in the opposite direction, the emitted light is coupled with an optical waveguide path 3 and inputted into a photodiode 6 propagating through the waveguide path 3. The photodiode 6 converts the inputted optical signal into an electrical signal, which is outputted through a terminal B. By this setup, a semiconductor laser device is sharply improved in operability in a high frequency region. |
| 公开日期 | 1991-06-20 |
| 申请日期 | 1989-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87752]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,NAKAMURA MASARU. Semiconductor laser device. JP1991145177A. 1991-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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