Semiconductor laser
文献类型：专利
| 作者 | SUZUKI NOBUO; KUROBE ATSUSHI |
| 发表日期 | 1988-02-08 |
| 专利号 | JP1988029988A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a quantum well laser having excellent characteristics of a low oscillation threshold and a wide modulation band by combining In1-xGaxAsyP1-x well layers and In1-u(Ga1-vAlv)As barrier layers to enhance the barrier against electrons. CONSTITUTION:On a substrate 1, a NInP buffer and clad layer 2 and then an undoped In0.53(Ga0.55Al0.45)0.47As barrier layer 41 having a thickness of 550Angstrom are grown. Further, 5 undoped In0.58Ga0.42As0.9P0.1 quantum well layers 3 having a thickness of 100Angstrom and 4 undoped In0.53(Ga0.55Al0.45)0.47As barrier layers 4 having a thickness of 100Angstrom are alternately stacked. On the last quantum well layer, an undoped In0.53(Ga0.55Al0.45)0.47As barrier layer 42 having a thickness of 550Angstrom is further grown. With this, the oscillation threshold current value can be made low and the modulation band can be made wide as compared with the conventional In1-xGaxAsyP1-y quantum well laser using In1-sGasAstP1-t as the barrier layer. |
| 公开日期 | 1988-02-08 |
| 申请日期 | 1986-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87755]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SUZUKI NOBUO,KUROBE ATSUSHI. Semiconductor laser. JP1988029988A. 1988-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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