Manufacture of semiconductor laser device
文献类型：专利
| 作者 | ONO YUICHI; YAMASHITA SHIGEO; TANAKA TOSHIAKI; KAJIMURA TAKASHI; YAMANAKA AKEMI |
| 发表日期 | 1988-08-29 |
| 专利号 | JP1988208291A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To shorten a working time to a large extent and to facilitate the integration of a laser device and electric circuits, by forming a semiconductor layer, which is transparent to laser wavelengths, at a part, where a part of a growing layer in a double heterostructure is removed. CONSTITUTION:A crystal having a double heterostructure comprising a first clad layer 13, a laser active layer 14 and a second clad layer 15 is formed on a semiconductor substrate 1 A region having a multilayered structure, which is to become the vicinity of the light output end surface of a laser device, is etched away to a position sufficiently deeper than the laser active layer 14. An insulating film 18 is formed on the flat region other than an etched-away part 17 by chemical vapor deposition method and the like. Then a semiconductor layer 19, which is transparent to laser wavelengths, or a double-layer structure thereof is formed. Thereafter, P-type and N-type electrodes 20 and 21 for current conduction are formed. In this way, the laser device is formed. Thus the laser device characterized by the very thin transparent semiconductor, less optical loss, no deterioration in an end surface and a large breakdown-limit output is obtained. |
| 公开日期 | 1988-08-29 |
| 申请日期 | 1987-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87758]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ONO YUICHI,YAMASHITA SHIGEO,TANAKA TOSHIAKI,et al. Manufacture of semiconductor laser device. JP1988208291A. 1988-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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