Semiconductor light emitting device
文献类型：专利
| 作者 | NISHITANI YORIMITSU |
| 发表日期 | 1983-04-28 |
| 专利号 | JP1983071685A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To completely prevent a reactive current which flows without passage of an active layer by reducing the shapes of sections in the light oscillating direction of an active layer which causes a laser oscillation at both ends, emitting protons at both sides of the active layer, forming a current blocking layer and forming a current passage. CONSTITUTION:After a p type InP layer 10 is grown on an n type indium phosphide (InP) substrate 9, a V-shaped groove is formed by chemical etching, an indium, gallium, arsenic phosphide (InGaAsP) active layer 12 is sequentially grown in liquid phase in a crescent shape narrowed at both sides. A P type InP clad layer 13 is grown in liquid phase from the layer 12, and a p type InGaAsP layer 14 is grown. A mask is formed on the layer 14, proton is emitted to the depth exceeding the positions at both ends of the layer 12, thereby forming a high resistance region 15. Since the proton emitting units 15 are formed in contact with both ends of the layer 12, the current which is injected to the layer 13 eliminates the reactive current which flows without passage of the layer 12, thereby improving the differentiated quantum efficiency and the oscillating threshold current. |
| 公开日期 | 1983-04-28 |
| 申请日期 | 1981-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87760]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHITANI YORIMITSU. Semiconductor light emitting device. JP1983071685A. 1983-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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