Semiconductor laser device and manufacturing process
文献类型：专利
| 作者 | TADA KUNIO; NAKANO YOSHIAKI; RA TAKESHI; INOUE TAKESHI |
| 发表日期 | 1991-03-04 |
| 专利号 | JP1991049287A |
| 著作权人 | 光計測技術開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacturing process |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device capable of generating induced emission light efficiently by selectively growing an active layer in conformity with the cycle of a diffraction grating and hence forming said diffraction grating on said active layer. CONSTITUTION:An active layer 7 is designed to make a selective growth in conformity with the cycle of a diffraction grating. In a manufacturing process which comprises a first process to grow a cladding layer 3, a second process which grows the active layer on the layer 3, and a third process which grows a cladding layer 8 on the active layer 7, the second process comprises a process which lays out a mask 15 in conformity with the cycle of the diffraction grating, a process which selectively grows the active layer 7 on a part which is not covered with the mask 15, and a process which eliminates the mask 15. The active layer is formed by selection growth under the structure stated above, thereby producing a diffraction grating which is free of any defect in the semiconductor structure. Therefore, the semiconductor laser device contains no part equivalent to an opaque layer and absorbs no optical energy, which makes it possible to increase the efficiency of excitation energy. |
| 公开日期 | 1991-03-04 |
| 申请日期 | 1989-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87764]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光計測技術開発株式会社 |
| 推荐引用方式 GB/T 7714 | TADA KUNIO,NAKANO YOSHIAKI,RA TAKESHI,et al. Semiconductor laser device and manufacturing process. JP1991049287A. 1991-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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