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文献类型：专利
| 作者 | KURODA TAKARO; KAJIMURA TAKASHI; KASHIWADA YASUTOSHI; KAYANE NAOKI; OOCHI HIROBUMI; OOTOSHI SO |
| 发表日期 | 1992-04-15 |
| 专利号 | JP1992022033B2 |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enable to oscillate by vertical single mode wherefrom noises are removed by a method wherein the relation between the role of the donor density of a semiconductor layer having N-conductivity type of the second or third semiconductor layer of semiconductor laser and the role of the photo output existent in the semiconductor layer of all of the photo output of laser is specified. CONSTITUTION:A photo resist film having a window is formed on the 100 suface of an N type GaAs substrate 1 by normal photo resist process. A recess form groove of the depth of approx. 1mum is formed on the substrate 1 by chemical etching through this window. After removing the photo resist film, a Te doped N-AlxGa1-xAs clad layer 2, an undoped AlyGa1-yAs active layer 3, a Zn doped P-AlzGa1-zAs clad layer 4, and a Te doped N-GaAs cap layer 5 are formed on the substrate by successive liquid growing method. |
| 公开日期 | 1992-04-15 |
| 申请日期 | 1982-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87767]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KURODA TAKARO,KAJIMURA TAKASHI,KASHIWADA YASUTOSHI,et al. -. JP1992022033B2. 1992-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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