Semiconductor laser
文献类型：专利
| 作者 | SANADA TATSUYUKI |
| 发表日期 | 1987-05-14 |
| 专利号 | JP1987104188A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable an optical signal to be accurately outputted by removing the contact layer and the other conductivity type clad layer except for the light emitting region to form a ridge in the light emitting region, and providing an ohmic electrode on the exposed other conductivity type clad layer, thereby enabling the control of a relaxation oscillation which occurs when a pulse current is applied. CONSTITUTION:On an n-GaAs substrate 1, an n-GaAlAs layer 2 as a one conductivity type clad layer, a natural GaAs layer 3 as an active layer, a p-GaAlAs layer 4 as the other conductivity type clad layer, and a p-GaAs layer 5 as the other conductivity type contact layer are sequentially formed. Then, on the p-GaAs layer 5 on the top of a ridge which is formed by partially leaving the p-GaAlAs layer 4 in the vertical direction and removing the layer 5 and the layer 4 except for the light emitting region, a Au/Zn/Au layer 6 is formed as a p-side electrode, on the exposed layer 4, a Au/Zn/Au (or Au/Ti) layer 7 as a third electrode, and on the substrate 1, a Au/AuGe layer 8 as an n-side electrode. If, on such ridge waveguide path laser (diode), using the n-side electrode 8 as a reference potential, about 2V and an otptimum value around it are applied to the p-side electrode 6 and the third electrode 7, respectively, relaxative oscillation, which is the prior problem, is suppressed. |
| 公开日期 | 1987-05-14 |
| 申请日期 | 1985-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87771]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SANADA TATSUYUKI. Semiconductor laser. JP1987104188A. 1987-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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