Semiconductor light-emitting device
文献类型：专利
| 作者 | SHIMOYAMA, KENJI; FUJII, KATSUSHI; NAGAO, SATORU; GOTO, HIDEKI |
| 发表日期 | 2000-02-08 |
| 专利号 | US6023483 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof. |
| 公开日期 | 2000-02-08 |
| 申请日期 | 1998-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87777]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIMOYAMA, KENJI,FUJII, KATSUSHI,NAGAO, SATORU,et al. Semiconductor light-emitting device. US6023483. 2000-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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