Semiconductor laser device
文献类型：专利
| 作者 | TSUJI SHINJI; NAKAYAMA YOSHINORI; HIRAO MOTONAO; MORI TAKAO; MIZUISHI KENICHI; NAKAMURA MICHIHARU |
| 发表日期 | 1983-05-25 |
| 专利号 | JP1983087890A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the breakdown of an end surface which leads to a decisive destruction of an element, by forming a pnpn structure inside crystals in parallel to a beam-emitting part, and by providing a gate electrode outside the element so that a current flowing to the beam-emitting part can be controlled by a thyristor operation. CONSTITUTION:Ga1-xAlxAs 22 forming a first clad layer, GaAs 1 forming an active layer, and Ga1-yAlyAs 21 forming a second clad layer are superposed sequentially on an n type GaAs substrate 4. Next, a p type Ga1-zAlzAs layer 32 and an n type Ga1-z, Alz, As layer 31 are superposed on both sides of a stripe-shaped semiconductor laminate region. Then, a region 7 of diffused impurity, such as Zn, is formed by a well- known method. A pnpn structure is constituted by these two layers, the GaAs substrate and the p type diffused region 7, including a buried region. By using a well-known method of diffusin or ion implantation, a p region 8 is formed so as to reach the p type GaAlAs layer 32, a gate electrode 9 is provided in addition to usual electrodes 5 and 6, and thereby an element of the present invention is obtained. In this element, a trigger current is made to flow to the gate electrode 9 to put the part of the pnpn structure in an ON state, and thereby a current flowing through the active region 1 can be restricted. |
| 公开日期 | 1983-05-25 |
| 申请日期 | 1981-11-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87778]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | TSUJI SHINJI,NAKAYAMA YOSHINORI,HIRAO MOTONAO,et al. Semiconductor laser device. JP1983087890A. 1983-05-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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