半導体レーザの製造方法
文献类型：专利
| 作者 | 粒来 保彦; 国分 義弘 |
| 发表日期 | 1997-05-02 |
| 专利号 | JP2642404B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To prevent crystal defect and application of stress to an active layer and to improve element characteristics by growing a P-type clad layer while varying composition ratio of group III elements of a supplied material constituting the clad layer according to a concentration of an acceptor dopant added in the clad layer, so that the composition ratios are different from composition ratios of group III elements in a material supplied when an N-type clad layer is formed. CONSTITUTION:On an N-type GaAs substrate 11, there are deposited by the MOCVD process an N-type GaAs buffer layer 12, an N-type In0.5(Ga0.5Al0.5)0.5P clad layer 13, an undoped In0.5Ga0.5P active layer 14, a P-type In0.5(Ga0.5Al0.5)0.5P clad layer 15, a P-type In0.5Ga0.5P cap layer 16 and an N-type GaAs block layer 17 sequentially in that order. For growth of the clad layer 15, vapor phase composition Xg1 is such that amount of In is larger than an amount of group III material supplied when the clad layer 13 is grown. For growth of the other layers, vapor phase composition Xg0 is such that lattice consistency is obtained. The block layer 17 is then provided with a groove, and a GaAs contact layer 18 is regrown. Finally, electrodes 21, 22 are adhered on the N- and P-sides, respectively. |
| 公开日期 | 1997-08-20 |
| 申请日期 | 1988-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87779]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 粒来 保彦,国分 義弘. 半導体レーザの製造方法. JP2642404B2. 1997-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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