Semiconductor laser and its manufacture
文献类型：专利
| 作者 | TENMYO JIRO; UEHARA SHINGO; KOUMAE ATSUO; HASUMI YUJI |
| 发表日期 | 1988-08-17 |
| 专利号 | JP1988198388A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To obtain a stable oscillation in the transverse mode by a method wherein a ridge structure or a V-groove structure is formed and a p-n junction part is incorporated in the ridge structure or the V-groove structure. CONSTITUTION:The following two are provided on a semiinsulating GaAs substrate 1: a laminate composed of an n.AlxGa1-xAs clad layer 2, an n.AlyGa1-yAs active layer 3 (where x>y), an n.AlxGa1-xAs clad layer 4 and an n.GaAs cap layer 5; a p region 6 formed in the laminate. A p-n junction which has been formed in the n.GaAs cap layer 5 is separated; a ridge structure or a V-groove structure which has been formed along the p-n junction is formed. That is to say, the p region 6 is formed in the laminated film; on the other hand, the ridge structure or the V-groove structure is formed; the p-n junction part is incorporated into the ridge structure or the V-groove structure; the difference in a refractive index in the transverse direction is caused by a contact part of the p region 6 with an air part or a GaAs layer where the ridge structure or the V-groove structure is formed on one side of the clad part. By this setup, a stable transverse mode is obtained. |
| 公开日期 | 1988-08-17 |
| 申请日期 | 1987-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87781]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | TENMYO JIRO,UEHARA SHINGO,KOUMAE ATSUO,et al. Semiconductor laser and its manufacture. JP1988198388A. 1988-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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