半導体レーザおよびその製造方法
文献类型：专利
| 作者 | 細羽 弘之; 関 章憲; 幡 俊雄; 近藤 雅文; 須山 尚宏; 松井 完益 |
| 发表日期 | 1997-11-07 |
| 专利号 | JP2717016B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザおよびその製造方法 |
| 英文摘要 | PURPOSE:To make it possible to increase the thickness of a current constricting layer comprising a light absorbing layer and an evaporation preventing layer and hence obtain a stable optical output even at a high output by increasing the sum of the thickness of the light absorbing layer and the evaporation preventing layer, which serves as a current blocking layer, to 0.4mum or above. CONSTITUTION:The film thickness of a light absorbing layer 105 is adapted to range from 0.1 to 0.4mum. At the same time, the sum of the thickness of the light absorbing layer 105 and an evaporation preventing layer 106 is arranged to range from 0.4 to 5mum. The work to trap electric current in a stripe groove is efficiently carried out by increasing the sum of the light absorbing layer 105 and the vapor preventing layer 106, which serves as a current blocking layer so that a stable semiconductor laser may be obtained even it is oscillated at high output. The formation of a larger stripe groove in a photo etching process where the width of the vapor preventing layer exceeds that of the light absorbing layer 106, is capable of improving more favorably the lamination condition of a second growth layer and increasing a current constricting layer comprising the light absorbing layer 105 and the vapor prevention layer 106 irrespective of an Al composition value of a P type AlGaAs clad layer 104. |
| 公开日期 | 1998-02-18 |
| 申请日期 | 1990-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87785]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 細羽 弘之,関 章憲,幡 俊雄,等. 半導体レーザおよびその製造方法. JP2717016B2. 1997-11-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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