Integrated radiation emitting system and process for fabricating same
文献类型：专利
| 作者 | FOLEY, BARBARA, M.; OOMS, WILLIAM, JAY; PRENDERGAST, JAMES, E.; EISENBEISER, KURT; RAMDANI, JAMAL; DROOPAD, RAVINDRANATH |
| 发表日期 | 2002-01-31 |
| 专利号 | WO2002009148A2 |
| 著作权人 | MOTOROLA, INC. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated radiation emitting system and process for fabricating same |
| 英文摘要 | High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radiation systems, including radiation sources such as light emitting diode or lasers and wave guides may be formed in the high quality epitaxial compound semiconductor material and above the oxide layers. |
| 公开日期 | 2002-01-31 |
| 申请日期 | 2001-07-18 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87788]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MOTOROLA, INC. |
| 推荐引用方式 GB/T 7714 | FOLEY, BARBARA, M.,OOMS, WILLIAM, JAY,PRENDERGAST, JAMES, E.,et al. Integrated radiation emitting system and process for fabricating same. WO2002009148A2. 2002-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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