Structure of submount for photo semiconductor element
文献类型：专利
| 作者 | SAITOU KATSUTOSHI; TOKUDA MASAHIDE; ONOZATO AKIMASA; IMAI KUNINORI; KOBAYASHI MASAMICHI |
| 发表日期 | 1984-09-20 |
| 专利号 | JP1984167038A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure of submount for photo semiconductor element |
| 英文摘要 | PURPOSE:To simplify the mounting process of an element in a submount as well as to realize the submount suitable for automatization by a method wherein the submount, which is used for mounting a chip of the light semiconductor element, is made of an electrical insulating material of pyrogenetic conductivity, more than one metalized patterns are provided on the surface thereof and a soldering pattern layer is further partially formed. CONSTITUTION:An Ni layer 56 is vacuum-evaporated on the back surface of a pyroconductive SiC ceramic substrate 51 to be used for a submount while the substrate 51 is being heated at temperatures of 400-500 deg.C and then the temperatures are lowered to about 200 deg.C for making an Au layer 57 coat, and a back-surface metalized layer is formed of these layers. Then, the substrate 51 is heated at 200-300 deg.C and a wiring layer 52 consisting of a Ti layer 61, an Mo layer 62 and an Au layer 63 is laminated for coating on the surface thereof. After that, the wiring layer 52 is made in the prescribed form and a laminated barrier layer 54 consisting of a Ti layer 64, an Mo layer 65 and an Au layer 66 is formed thereon. After then, a soldering pad 55 consisting of Pb and Sn is provided thereon and the substrate 51 is cut in the desired size. At this cutting time, the barrier layer 54 is a layer to be used for preventing an alloying reaction between the solder 55 and the Au layer 63. |
| 公开日期 | 1984-09-20 |
| 申请日期 | 1983-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87817]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SAITOU KATSUTOSHI,TOKUDA MASAHIDE,ONOZATO AKIMASA,et al. Structure of submount for photo semiconductor element. JP1984167038A. 1984-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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