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文献类型：专利
| 作者 | SHINOHARA YASUO |
| 发表日期 | 1987-09-14 |
| 专利号 | JP1987043556B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve the reliability of a semiconductor laser element by forming a metallic layer by Cr layer, Al layer, Ti layer, Pt layer and Au layer controlled at their thicknesses as an anode side electrode to thereby enhance the heat resistance thereof. CONSTITUTION:n-Type AlXGa1-XAs layer 2, undoped AlYGa1-YAs active layer 3, n-type AlXGa1-XAs layer 4, and p-type GaAs layer 5 are laminated and grown on an n-type GaAs substrate 1 in a double hetero structure. Then, A Zn diffused stripe region 6 impregnated into the layer 4 is provided at the central region of the layer 5, and AuGe-AuNi layer 7 and Au layer 8 are coated as laminated electrodes on the back surface of the substrate On the other hand, Al layer 10 of 3-5mum thick for retaining a heat sink and electrode thickness, Ti layer 11 of 500-700Angstrom thick, Pt layer 12 of 1500-2000Angstrom thick for preventing reaction of Al with Au, and Au layer 13 of 2000-3000Angstrom thick for mounting on the heat sink are sequentially coated in this order on the layer 5 containing the region 6 as electrodes. |
| 公开日期 | 1987-09-14 |
| 申请日期 | 1978-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87821]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SHINOHARA YASUO. -. JP1987043556B2. 1987-09-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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