Semiconductor light-emitting device
文献类型：专利
| 作者 | MOGI SACHIHIRO; YAMASHITA SHIGEO |
| 发表日期 | 1988-11-15 |
| 专利号 | JP1988278289A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To form a semiconductor light-emitting device by integrating photodiodes with high output efficiency of a monitoring current by a method wherein a current- constricting layer situated in a monitoring photodiode part is connected electrically to a semiconductor layer whose conductivity type is the same as that of the current- constricting layer and a light-absorption region constituted by a p-n junction part is expanded. CONSTITUTION:A first p-type GaAlAs clad layer 2 and an n-type current-constricting layer 3 are grown epitaxially on a p-type GaAs semiconductor substrate 1; one part of the layer 3 as a laser-current path 4 is etched to be stripe-shaped. Then, a second p-type GaAlAs clad layer 5, an undoped GaAs active layer 6, a third n-type GaAlAs clad layer 7 and an n-type GaAs cap layer 8 are grown in succession. A stepped part 9 is formed by an etching operation; one part of the path 3 is exposed. A separation groove 10 whose depth reaches the substrate 1 is formed by an ion beam etching operation; this assembly is divided into a laser part and a monitoring photodiode part. Then, a p-type common electrode 11, an n-type laser electrode 12, an n-type current-constricting layer electrode 13 and an n-type monitoring electrode 14 are formed; a surface protective film is formed; this assembly is cleaved to a prescribed size and is separated. |
| 公开日期 | 1988-11-15 |
| 申请日期 | 1987-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87824]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MOGI SACHIHIRO,YAMASHITA SHIGEO. Semiconductor light-emitting device. JP1988278289A. 1988-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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