Semiconductor laser
文献类型：专利
| 作者 | SUZUKI TOORU |
| 发表日期 | 1984-10-19 |
| 专利号 | JP1984184583A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the titled device having good characteristics of a small series resistance and therefore less heat generation by using a (AlXGa1-X)0.5In0.5P series mixed crystal as a P type photo confined layer. CONSTITUTION:This semiconductor laser has a laminated structure wherein an active layer 4 whose band gap energy is smaller than that at the point GAMMA of the (AlXGa1-X)0.5In0.5P and which is composed of a compound semiconductor with good GaAs lattice matching is sandwiched between a clad layer 3 made of N type ZnSe or ZnSe1-YSY and a carrier confined layer 5 made of P type ZnSe or ZnSe1-YSY 100Angstrom or more thick. Further, the laser is of a construction equipped with the photo confined layer 6 made of P type (AlXGa1-X)0.5In0.5P in contact with the P type carrier confined layer. Otherwise, as a constitution of reduced series resistance, a carrier confined layer 11 made of N type ZnSe or ZnSe1-YSY 100Angstrom or more thick is provided instead of the above-mentioned N type clad layer 3, and further this layer 11 is provided with a photo confined layer 10 made of N type (AlXGa1-X)0.5In0.5P. |
| 公开日期 | 1984-10-19 |
| 申请日期 | 1983-04-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87827]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | SUZUKI TOORU. Semiconductor laser. JP1984184583A. 1984-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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