中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
化合物半導体装置の製造方法

文献类型:专利

作者長坂 博子; 渡辺 幸雄; 岡島 正季; 山本 基幸; 武藤 雄平; 茂木 直人
发表日期1995-11-29
专利号JP1995111967B2
著作权人株式会社東芝
国家日本
文献子类授权发明
其他题名化合物半導体装置の製造方法
英文摘要PURPOSE:To prevent crystal defect of crystal layer being caused to grow on the etching surface and improve reliability of element to be manufactured by etching a compound semiconductor crystal including aluminum (Al) using a mixed liquid selecting a volume ratio of sulfuric acid, hydrogen peroxide and water. CONSTITUTION:After causing a clad layer 12 including aluminum (Al), an active layer 13, a clad layer 14 and a current rejection layer 15 to grow on a substrate 11, the current rejection layer 15 is coated with a photo resist 16 and a striped window is formed to the resist 16. With the resist 16 used as the mask, etching is carried out up to the intermediate part of the current rejection layer 15 and clad layer 14 in order to form a striped groove 17. Next, the resist 16 is removed and a first covering layer 18, a second covering layer 19 and a contact layer 20 are caused to grow by the chemical vapor growth method or molecular beam epitaxy method. Thereby, a crystal layer having no crystal defect can be caused to grow and performance and reliability of element thus formed can also be improved.
公开日期1995-11-29
申请日期1984-08-30
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/87835]  
专题半导体激光器专利数据库
作者单位株式会社東芝
推荐引用方式
GB/T 7714
長坂 博子,渡辺 幸雄,岡島 正季,等. 化合物半導体装置の製造方法. JP1995111967B2. 1995-11-29.

入库方式: OAI收割

来源:西安光学精密机械研究所

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