化合物半導体装置の製造方法
文献类型：专利
| 作者 | 長坂 博子; 渡辺 幸雄; 岡島 正季; 山本 基幸; 武藤 雄平; 茂木 直人 |
| 发表日期 | 1995-11-29 |
| 专利号 | JP1995111967B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 化合物半導体装置の製造方法 |
| 英文摘要 | PURPOSE:To prevent crystal defect of crystal layer being caused to grow on the etching surface and improve reliability of element to be manufactured by etching a compound semiconductor crystal including aluminum (Al) using a mixed liquid selecting a volume ratio of sulfuric acid, hydrogen peroxide and water. CONSTITUTION:After causing a clad layer 12 including aluminum (Al), an active layer 13, a clad layer 14 and a current rejection layer 15 to grow on a substrate 11, the current rejection layer 15 is coated with a photo resist 16 and a striped window is formed to the resist 16. With the resist 16 used as the mask, etching is carried out up to the intermediate part of the current rejection layer 15 and clad layer 14 in order to form a striped groove 17. Next, the resist 16 is removed and a first covering layer 18, a second covering layer 19 and a contact layer 20 are caused to grow by the chemical vapor growth method or molecular beam epitaxy method. Thereby, a crystal layer having no crystal defect can be caused to grow and performance and reliability of element thus formed can also be improved. |
| 公开日期 | 1995-11-29 |
| 申请日期 | 1984-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87835]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 長坂 博子,渡辺 幸雄,岡島 正季,等. 化合物半導体装置の製造方法. JP1995111967B2. 1995-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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