Laser light generator
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; OSHIMA MASAHIRO; TATENO KIMIO; KAJIMURA TAKASHI; MAIKERU MAKUROKURIN |
| 发表日期 | 1992-03-12 |
| 专利号 | JP1992079279A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser light generator |
| 英文摘要 | PURPOSE:To have a small change in wave length by building an optical resonator of semiconductor laser as if only light of a first wave length were resonated within the scope of the optical gain distribution of the semiconductor laser. CONSTITUTION:On an n-type GaAs substrate 1, an Al-5Ga-5As clad layer 2, a quantum well-structured active layer 3 and a p-type Al-5Ga--5As clad layer 4 are deposited in this order. Next the periodic unevenness 10 is formed on the p-type Al-3Ga-7As clad layer 4. After that, a p-type Al-5Ga-5As layer 5 and an n-type GaAs layer 6 are deposited. Then, an SiO2 film is formed and three pieces of stripe patterns are so formed that they may cross the unevenness 10 at right angles. After Zn is diffused in the n-type GaAs layer 6 using the SiO2 film as a mask, a Cr/Au electrode 8 is formed on the front surface while an AuGaNi/Cr/Au electrode 9 is formed on the rear surface of the lamination. Then, end faces that cross a plurality of the stripe patterns at right angles are removed to turn the lamination into an optical resonator. After that, SiO2 coating films 11, 12 are formed alternately on the end face of each stripe pattern to convert light of 180-degree phase to light of zero-degree phase. By this method, a reduced-size and high-output device is manufactured without any necessity of temperature control, etc. |
| 公开日期 | 1992-03-12 |
| 申请日期 | 1990-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87836]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,OSHIMA MASAHIRO,TATENO KIMIO,et al. Laser light generator. JP1992079279A. 1992-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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