Semiconductor laser device
文献类型：专利
| 作者 | OOTOSHI SOU; UOMI KAZUHISA; NAKATSUKA SHINICHI; ONO YUUICHI; KAYANE NAOKI; KAJIMURA TAKASHI |
| 发表日期 | 1985-07-17 |
| 专利号 | JP1985134489A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make the increase of an output and the improvement of reliability coexist by keeping a difference between the mean refractive index of an active layer and the refractive index of a clad layer within a specific value. CONSTITUTION:An I-Ga1-xAlxAs clad layer 2', an active layer 3' having superlattice structure and an I-Ga1-yAlyAs clad layer 4' are formed on a semi-insulating (I) GaAs substrate 1'. A P type conductive impurity and an N type impurity are introduced up to depth penetrating the layer 3' from one part of the surface of the layer 4', and a P type conductive region 10 and an N type conductive region 11 are formed. Consequently, superlattice structure is collapsed in each conductive region, and mean compositions are obtained. Accordingly, the refractive index of the active layer is made higher than those of impurity introducing regions holding the active layer, and a mode in the horizontal direction is controlled. A mean refractive index through which the refractive indices of a quantum well layer and a barrier layer are obtained as the value of a bulk may be made smaller than the refractive indices of the clad layers, refractive-index waveguide is enabled when a difference between both is -0.5-+0.1, and gain waveguide is also enabled when the value is -0.5-0. |
| 公开日期 | 1985-07-17 |
| 申请日期 | 1983-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87839]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | OOTOSHI SOU,UOMI KAZUHISA,NAKATSUKA SHINICHI,et al. Semiconductor laser device. JP1985134489A. 1985-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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