Semiconductor laser
文献类型：专利
| 作者 | KOJIMA KEISUKE; HISAMA KAZUO; KURODA KENICHI |
| 发表日期 | 1986-01-31 |
| 专利号 | JP1986023383A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To cause stable single longitudinal mode oscillation and reduce the spectral width, by forming a diffraction lattice having a small coupling coefficient on a waveguide, and increasing the length of a resonator. CONSTITUTION:A diffraction lattice 5 having a small coupling coefficient K is provided between an active layer 2 and a trapping layer 3, and the resonator has a sufficiently large length L. The diffraction grating 5 may be provided between the active layer 2 and a substrate 1 rather than between the active layer 2 and the trapping layer 3. For instance, the whole of the waveguide is formed from the active layer 2, and the resonator length L is set so as to be 1,000mum or more, while the coupling coefficient of the diffraction lattice 5 is set so as to be 10cm or less. |
| 公开日期 | 1986-01-31 |
| 申请日期 | 1984-07-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87841]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | KOJIMA KEISUKE,HISAMA KAZUO,KURODA KENICHI. Semiconductor laser. JP1986023383A. 1986-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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