Semiconductor laser device
文献类型：专利
| 作者 | DOI KOUNEN; HIRAO MOTONAO; NAKAMURA MICHIHARU; TSUJI SHINJI; MORI TAKAO |
| 发表日期 | 1984-11-29 |
| 专利号 | JP1984210686A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To remove a crystal defect induced in a buried layer being in contact with a buffer layer in a laser device, and to manufacture a laser having excellent reproducibility by forming the buried layer in a crystal growth layer of a four-element composition. CONSTITUTION:A buffer layer 2, an active layer 3, a clad layer 4 and a cap layer 5 are grown on a semiconductor substrate 1 in succession through a slide epitaxial method. When forming the each layer 2-5, the composition of a solution is brought close to that of InP, and a grating constant matching with InP is used. Each layer 2-5 is formed as an InP buffer layer 2 in predetermined thickness, an active layer 3 of a four-element composition, an InP clad layer 4 and a cap layer 5 of the four-element composition by the composition of the solution, the layer 3 shall be of In0.74Ga0.26As0.57P0.43, and the layer 4 shall be of In0.84 Ga0.16As0.36P0.64. A first In0.99Ga0.01As0.02P0.98 buried layer 6, an N type InP second buried layer 7 and an In0.74Ga0.26As0.57P0.43 cap layer 8 are shaped through mesa etching, and crystal defects induced in the layers 6, 7 are prevented. |
| 公开日期 | 1984-11-29 |
| 申请日期 | 1984-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87844]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | DOI KOUNEN,HIRAO MOTONAO,NAKAMURA MICHIHARU,et al. Semiconductor laser device. JP1984210686A. 1984-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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