中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Light source for wavelength tunable semiconductor laser

文献类型:专利

作者NOTOMI MASAYA; MITOMI OSAMU; YOSHIKUNI YUZO
发表日期1991-06-18
专利号JP1991142988A
著作权人日本電信電話株式会社
国家日本
文献子类发明申请
其他题名Light source for wavelength tunable semiconductor laser
英文摘要PURPOSE:To realize a semiconductor laser light source having a wider varying width of wavelength by setting the optimum wavelength of a nonreflecting coating to be provided on the end face of a single semiconductor laser to shorter wavelength side than the oscillation wavelength of the single laser to be used. CONSTITUTION:A nonreflective coating film 3 is provided on one end face 2 of a semiconductor laser 1, a light emitted from the end face of the film 3 is collimated by a lens 4, reflected by a diffraction grating 5 disposed on an outer optical axis, and returned to the laser A resonator is formed between the grating 5 and the end face 6 not coated with the nonreflective coating of the laser 1, and a laser oscillation is executed. In this case, the optimum wavelength of the coating 3 is set to shorter wavelength side by 40-100nm than the oscillation wavelength (gain peak wavelength) of the sole laser to be used. Thus, the varying width of wavelength of an external mirror type wavelength tunable semiconductor laser light source is increased by shifting the optimum wavelength of the coating 3.
公开日期1991-06-18
申请日期1989-10-30
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/87846]  
专题半导体激光器专利数据库
作者单位日本電信電話株式会社
推荐引用方式
GB/T 7714
NOTOMI MASAYA,MITOMI OSAMU,YOSHIKUNI YUZO. Light source for wavelength tunable semiconductor laser. JP1991142988A. 1991-06-18.

入库方式: OAI收割

来源:西安光学精密机械研究所

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