Manufacture of semiconductor laser
文献类型：专利
| 作者 | OMURA ETSUJI |
| 发表日期 | 1990-04-26 |
| 专利号 | JP1990114583A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To execute a selective growth operation while a narrow stripe-shaped window is aligned completely in a self-aligned manner by a method wherein a mask which is used as a diffusion source during a selective growth operation to form an electrode is utilized as it is in order to eliminate a need for a photolithographic process. CONSTITUTION:A film 5, containing an impurity, which is used as a diffusion source of the impurity is formed on a second clad layer 4; the impurity is diffused from this film; one part of an active layer 3 is made selectively disordered. Then, an n-AlGaAs layer 10 is grown by making use of an SiO2 film 6 and the ZnO film 5 as a selective growth mask by a liquid growth method or an MOCVD method; a single crystal is grown on the second n-AlGaAs clad layer 4 in a part of a stripe-shaped window 7 where the film does not exist. After a selective growth operation, an n-electrode 11 is formed by a vacuum evaporation method or the like. Thereby, it is possible to obtain a growth layer in a self-aligned manner without executing a photolithographic process while the part of the stripe-shaped window 7 is aligned completely. |
| 公开日期 | 1990-04-26 |
| 申请日期 | 1988-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87848]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OMURA ETSUJI. Manufacture of semiconductor laser. JP1990114583A. 1990-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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