Semiconductor laser
文献类型：专利
| 作者 | KAWADA SEIJI; GOMYO AKIKO |
| 发表日期 | 1992-03-06 |
| 专利号 | JP1992072787A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent a laser beam from deteriorating in quality keeping it short in wavelength by a method wherein a second conductivity type first clad layer above an active layer is provided with a stripe-like inverted mesa structure which is formed making the clad layer partially large in thickness and made to extend in a [011] direction, and a semiconductor layer is provided to both the sides of the mesa structure to bury the mesa structure. CONSTITUTION:An N-type (Al0.6Ga0.4)0.5In0.5P clad layer 2, a Ga0.5In0.5P active layer 3, a P-type (Al0.6Ga0.4)0.5In0.5P clad layer 4, and a P-type GaInP layer are successively formed on an N-type GaAs substrate A stripe-like Sin. mask 9mum in width is formed in a direction through a photolithography method on the wafer grown as above. The substrate 1 is etched into a mesa shape up to a halfway point of the P-type (Al0.6Ga0.4)0.5In0.5P clad layer 4 using a hydrochloric acid etching solution. In succession, A second growth process us carried out through a vacuum MOVPE keeping the SiO2 mask attached to the surface of the substrate 1 to form an N-type GaAs layer 6. Then, after the SiO2 mask is removed, a third growth process is executed through a vacuum MOVPE to form a P-type GaAs layer 7. Lastly, a P and an N electrode are provided, and the wafer is cleaved so as to be 300mum in cavity length and separated into chips. |
| 公开日期 | 1992-03-06 |
| 申请日期 | 1990-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87849]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KAWADA SEIJI,GOMYO AKIKO. Semiconductor laser. JP1992072787A. 1992-03-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。