Semiconductor laser
文献类型：专利
| 作者 | ENDO KENJI |
| 发表日期 | 1992-01-14 |
| 专利号 | JP1992010689A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To form a semiconductor laser whose life is long by a method wherein an AlGaAs light-emitting layer is formed so as to be sandwiched between AlGaInP layers. CONSTITUTION:An n-type Al0.5Ga0.5As clad layer 2 and a p-type Al0.5Ga0.5As clad layer 4 are formed on an n-type GaAs substrate 1 so as to sandwich an active-layer waveguide layer 3; in addition, the current construction and the transversal-mode control structure by an n-type GaAs current-blocking layer 6 are provided. A low-resistance ohmic contact is formed on a p-type GaAs cap layer 5. The active-layer waveguide layer 3 is constituted of the following: a multilayer film formed in such a way that three GaAs well layers 9 sandwich two GaInP barrier layers 10; and a p-type GaInP guide layer 12 and an n-type GaInP guide layer 11 which have been formed on both outer sides of the multilayer film. Since the growth and the migration velocity of a crystal defect are slow as compared with the AlGaAs layer, the guide layers and the barrier layers restrain the crystal defect from creeping to the active layer, and a semiconductor laser whose lige is long can be obtained. |
| 公开日期 | 1992-01-14 |
| 申请日期 | 1990-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87870]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | ENDO KENJI. Semiconductor laser. JP1992010689A. 1992-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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