Semiconductor laser device
文献类型：专利
| 作者 | SHONO MASAYUKI; HONDA MASAHARU; HIROYAMA RYOJI; HAMADA HIROYOSHI |
| 发表日期 | 1992-09-16 |
| 专利号 | JP1992260388A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain an AlGaInP self-pulsation semiconductor laser device which can be easily manufactured. CONSTITUTION:A clad layer constituting a current constricting section has a two-layer structure composed of the first and second clad layers 4 and 5. The first clad layer 4 on an active layer 3 is formed of AlGaInP and the second clad layer 5 on the first clad layer 4 is formed of AlGaAs. In addition, the stripe width of the second clad layer 5 is narrower than that of the first clad layer 4. |
| 公开日期 | 1992-09-16 |
| 申请日期 | 1991-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87887]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | SHONO MASAYUKI,HONDA MASAHARU,HIROYAMA RYOJI,et al. Semiconductor laser device. JP1992260388A. 1992-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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