Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | HORIMATSU TETSUO |
| 发表日期 | 1988-06-29 |
| 专利号 | JP1988156388A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To make it possible to couple output light to a signal processing part with excellent coupling efficiency all the time without cumbersome work, by forming a waveguide comprising a light guide part and a clad part on a substrate so as to face an active layer on the semiconductor substrate, locally heating the waveguide's protruding part, which is formed by etching a part of the clad part on the side of the active layer, and cooling the protruding part. CONSTITUTION:After electrodes are formed on a semiconductor substrate 1, a resist mask 7 is attached to positions where the main body of LD and a modulator are to be formed. Then the substrate is etched to a specified depth. An active layer 2 of the main body of the LD and a waveguide part 3 of the waveguide of the modulator are removed to obtain undercut state. After the resist mask 7 is removed, both ends of the LD main body 8 are cleaved, and a resonator is formed between the end surfaces of the active layer 2. High output-power laser such as YAG laser is projected on a protruding part 6, which is formed by the undercut of the waveguide part 3, and the protruding part 6 is locally heated. Thus the surface of the protruding part 6 becomes smooth. Under this state, the part is cooled. Then the protruding part 6 having the surface with continuous curvature is formed. The protruding part 6 functions as a convex lens and condenses the emitting length into the waveguide part 3 efficiently. |
| 公开日期 | 1988-06-29 |
| 申请日期 | 1986-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87888]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | HORIMATSU TETSUO. Manufacture of semiconductor light emitting device. JP1988156388A. 1988-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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