Distribution feedback semiconductor laser device
文献类型：专利
| 作者 | SUGAWARA SATOSHI; TAKIGUCHI HARUHISA; NAKANISHI CHITOSE; KUDO HIROAKI |
| 发表日期 | 1991-12-18 |
| 专利号 | JP1991288489A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distribution feedback semiconductor laser device |
| 英文摘要 | PURPOSE:To acquire a distribution feedback semiconductor laser device of good element characteristics at high yield by providing an optical guide layer which consists of a stripe-like growth layer whose cross sectional contour is triangular in a number of stripe-like grooves parallel on a substrate and by forming a diffraction grating on a slant of the guide layer by etching. CONSTITUTION:An SiO2 film is deposited on a substrate 1, a stripe-like groove is formed, and an SiO2 mask 12 is formed. Then, an Se doped n-GaAs buffer layer 2, an Se doped n-Al0.5Ga0.5As clad layer 3, a nondoped Al0.13Ga0.08As active layer 4 and a Zn doped p-Al0.5Ga0.5As clad layer 5 are formed successively on the inside of the groove by MOCVD method. After a diffraction grating pattern is formed by electron beam exposure on the second resist layer 14 formed on the tripe-like growth layer, a first resist layer 13 is etched by oxygen plasma etching and a diffraction grating pattern is formed on a slant of an optical guide layer 6. Thereafter, a diffraction grating is formed on the optical guide layer 6 by ion beam etching. |
| 公开日期 | 1991-12-18 |
| 申请日期 | 1990-04-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87889]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SUGAWARA SATOSHI,TAKIGUCHI HARUHISA,NAKANISHI CHITOSE,et al. Distribution feedback semiconductor laser device. JP1991288489A. 1991-12-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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