Manufacture of semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI MASAO; TSUBOTA TAKASHI; KASHIMA YASUMASA |
| 发表日期 | 1990-08-17 |
| 专利号 | JP1990207583A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To easily and stably provide a high reproducibility high reliability semiconductor laser by forming a striped convex portion on a semiconductor substrate 11 by dry etching, and forming an active layer on an exposed surface of said convex portion from which a mask film is removed. CONSTITUTION:A SiO2 film 12 is deposited on an n-InP substrate 11 and formed into a stripe shape (like a straight line), which film 12 is then used as a mask to form a protruded ridge portion 11a on the substrate by subjecting the substrate 11 to dry etching on the n-InP substrate 11 of the dry etched portion on the opposite sides of the ridge portion 11a, there are formed a P-InP layer 13c, an n-InP layer 13b, and a P-InP layer 13c in succession by epitaxial growth to form an InP block layer 13. Then, the SiO2 film 12 on the ridge portion 11a is removed, and there are formed in succession an InGaAsP active layer 14a on the ridge portion 11a, and an InGaAsP layer 14b, a P-InP cladding layer 15, and an InGaAsP contact layer 16 on the InP block layer 13 by second epitaxial growth. |
| 公开日期 | 1990-08-17 |
| 申请日期 | 1989-02-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87891]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI MASAO,TSUBOTA TAKASHI,KASHIMA YASUMASA. Manufacture of semiconductor laser. JP1990207583A. 1990-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。