Semiconductor laser
文献类型：专利
| 作者 | SAKIYAMA HAJIME; TANAKA HARUO; MUSHIGAMI MASAHITO |
| 发表日期 | 1990-08-01 |
| 专利号 | JP1990194584A |
| 著作权人 | ROHM CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce threshold current and improve current efficiency by forming an N-type or an undoped layer between a first upper-part clad layer constituting a first growth layer and a light-absorbing layer and by forming a P-type dopant implantation part at this stripe groove corresponding part. CONSTITUTION:A lower-part clad layer 21, an active layer 22, a first upper-part clad layer 23, and an N-type or an undoped layer 23a. a light-absorbing layer 24, and an evaporation prevention layer 25 are laminated in sequence and a first growth layer 2 is formed on a semiconductor substrate. An evaporation- prevention layer 25 other than an area for forming a stripe groove 3 is covered with a photo resist 6 and an evaporation-prevention layer 25 and the light- absorbing layer 24 are etched for leaving the light-absorbing layer 24 slightly, thus forming the stripe groove 3 of any width. Then, ion is allowed to hit against and is implanted into the surface of the N-type layer (or undoped layer) 23a. thus forming a P-type dopant ion implantation part 6 at a part corresponding to the stripe groove 3 of the N-type layer (or undoped layer) 23a. |
| 公开日期 | 1990-08-01 |
| 申请日期 | 1989-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87893]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO LTD |
| 推荐引用方式 GB/T 7714 | SAKIYAMA HAJIME,TANAKA HARUO,MUSHIGAMI MASAHITO. Semiconductor laser. JP1990194584A. 1990-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。