Semiconductor laser element
文献类型：专利
| 作者 | KAMETANI MASAAKI; FUJIWARA KENZO; TOKUDA YASUKI; MITSUNAGA KAZUMASA; OTA ATSUSHI; KOJIMA KEISUKE |
| 发表日期 | 1988-05-16 |
| 专利号 | JP1988110687A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To permit output beams to be deflected without having an effect on operating conditions of a semiconductor laser and to have sufficient deflection angles by controlling the amount of electric currents injected to respective third electrodes and then, by controlling the deflection angles of the laser beams that are emitted from an optical waveguide. CONSTITUTION:Output beams are emitted from an end face through an optical waveguide 12 located at a part where the third electrodes 13 are formed. Thereby, if electric currents injected by respective third electrodes 13a-13f make a refraction factor of the optical waveguide 12 larger locally, the laser beams pass through a part where its refraction factor has increased. Therefore, a part having the high refraction factor is oscillated laterally and the output beams are deflected by controlling the electric currents injected to respective third electrodes 13a-13f. Although in such a case, the amount of the electric currents is, for instance, several tens of mA and even the electric currents flowing into an active layer 3 is also several tens of mA, respective third electrodes 13a-13f have gradually a larger amount of the electric currents as these electrodes direct the laser beams to the direction desired to be more deflected. In this way, as the laser beams are deflected by controlling the amount of the electric currents impressed to the electrodes 13 at an external guided wave region 15, they can be deflected without having an effect on their output powers. |
| 公开日期 | 1988-05-16 |
| 申请日期 | 1986-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87902]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAMETANI MASAAKI,FUJIWARA KENZO,TOKUDA YASUKI,et al. Semiconductor laser element. JP1988110687A. 1988-05-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。