Manufacture of semiconductor laser
文献类型：专利
| 作者 | MIZUOCHI HITOSHI |
| 发表日期 | 1990-11-06 |
| 专利号 | JP1990271584A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the generation of a current block layer in the shape of exerting an adverse effect on the property by buring and growing a first current block layer of the second conductivity type and a second current block layer of the first conductivity type only at both sides of a mesa part being formed. CONSTITUTION:An InGaAsP active layer 3, an n-InP barrier layer 4, an n- InGaAsP light guide layer 5, an n-InP clad layer 6, and an n InGaAsP contact layer 7 are grown in order on the p-InP buffer layer 2 of a p-InP substrate 1 by MOCVD method (organic metal vapor growth method). Next, a mesa is formed, and then an n-InP current block layer 8 is grown on the p-InP buffer layer 2 by the MOCVD method, and a p-InP current block layer 9b is grown on the current block layer 8 until the mesa top becomes flat. Hereby, troubles cease to occur such as that the n-InF current block layer 8 and the n-InP clad layers 6 short circuit and a current leak path is formed, and that the p-InP current block layer 9b is formed on the light guide layer and the currents become hard to flow. |
| 公开日期 | 1990-11-06 |
| 申请日期 | 1989-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87903]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIZUOCHI HITOSHI. Manufacture of semiconductor laser. JP1990271584A. 1990-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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