Semiconductor laser device and method for fabricating the same
文献类型：专利
| 作者 | ONISHI, TOSHIKAZU |
| 发表日期 | 2007-05-08 |
| 专利号 | US7215691 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method for fabricating the same |
| 英文摘要 | A semiconductor laser device has an active layer, a first cladding layer formed on the active layer, and a second cladding layer formed on the first cladding layer. The first cladding layer is doped with magnesium as a first impurity to have a high resistivity. The second cladding layer is doped with zinc as a second impurity to have a resistivity lower than the resistivity of the first cladding layer. |
| 公开日期 | 2007-05-08 |
| 申请日期 | 2003-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87905]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ONISHI, TOSHIKAZU. Semiconductor laser device and method for fabricating the same. US7215691. 2007-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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