Semiconductor laser
文献类型：专利
| 作者 | OMURA ETSUJI |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989292880A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser with window structure and a low threshold current by creating a light waveguide path at a window structure part near the edge surface of a resonator. CONSTITUTION:When there is no difference in reflection index in horizontal direction of a crank part 208 or there is no waveguide structure, a laser beam 220 expands greatly. But, by providing a waveguide mechanism at the crank part 208, the laser beam 220 returns to an active area 207 after being reflected on the edge surface of resonator without spreading and scattering of laser light can be ignored. Thus, increase in threshold value can be prevented. Thus, by forming a ridge-type light waveguide path at the crank part which is in window structure, a semiconductor laser with improved reliability can be obtained. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1988-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87909]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OMURA ETSUJI. Semiconductor laser. JP1989292880A. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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