半導体レーザの製造方法
文献类型：专利
| 作者 | 瀧口 治久; 中津 弘志; 猪口 和彦; 厚主 文弘; 坂根 千登勢; 奥村 敏之; 菅原 聰 |
| 发表日期 | 1996-08-22 |
| 专利号 | JP2554192B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To enable a narrow active layer to be formed excellent in reproducibility and a buried layer to be grown by a method wherein an AlGaAs layer is laminated on a GaAs substrate, an etching process is carried out, and a selective growth is performed through an MOCVD method. CONSTITUTION:A second conductivity type or a semi-insulating (resistivity: 1X10OMEGAcm) AlxGa1-xAs ((AlxGa1-x)0.47In0.53As conformable to InP in lattice) is laminated on a first conductivity type GaAs (InP) substrate provided with a 100 plane. A channel is provided in a direction to a laminated substrate so as to reach to the substrate through etching, and a double hetero-structure composed of a first conductivity type AlGaAs (InP) clad layer, an AlGaAs (GaxIn1-xPyAs1-y, x=0.47(1-y)) active layer, an a second conductivity type AlGaAs (InP) clad layer is made to grow selectively on the substrate at the base of the channel, where the grown hetero-structure whose side face is surrounded by a 111 plane is triangular or trapezoidal in cross section. Furthermore, an AlGaAs (InP) semi-insulating layer, a PN reverse bias multilayer, or a second conductivity type AlGaAs (InP) layer is made to grow on the outer region of the hetero-structure concerned as buried. |
| 公开日期 | 1996-11-13 |
| 申请日期 | 1990-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87911]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 瀧口 治久,中津 弘志,猪口 和彦,等. 半導体レーザの製造方法. JP2554192B2. 1996-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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