Semiconductor light emitting device
文献类型：专利
| 作者 | OTSUKA KENICHI; ABE YUJI; OISHI TOSHIYUKI; SUGIMOTO HIROSHI; MATSUI TERUHITO |
| 发表日期 | 1989-08-29 |
| 专利号 | JP1989215087A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To reduce a laser oscillation threshold current with a modulation portion kept unified, by making an active region in the shape of a narrow stripe and the same time, by forming at least an optical guide layer by the liquid growth method and placing it inside a wave guide portion and on both sides of the active region. CONSTITUTION:In the first crystal growth, an InP clad layer 2, an InGaAsP active layer 3 and an InP layer 4 are formed in this order on an InP substrate Nextly, the InP layer 4 is etched selectively and the active layer 3 is also etched selectively to form a narrow stripe active region and to expose the surface of the InP clad layer 2. In the second crystal growth, an InGaAsP guide layer 5, an InP clad layer 6 and an InGaAsP contact layer 7 are formed in this order. At this time, at least the guide layer 5 is formed by the liquid phase growth method. Since the growth time is controlled properly, the guide layer is not deposited on the narrow stripe-shaped active region. |
| 公开日期 | 1989-08-29 |
| 申请日期 | 1988-02-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87913]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTSUKA KENICHI,ABE YUJI,OISHI TOSHIYUKI,et al. Semiconductor light emitting device. JP1989215087A. 1989-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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