Production of semiconductor laser
文献类型：专利
| 作者 | HIRAYAMA NORIYUKI; IDOTA TAKESHI; OSHIMA MASAAKI |
| 发表日期 | 1988-08-30 |
| 专利号 | JP1988209189A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Production of semiconductor laser |
| 英文摘要 | PURPOSE:To make possible a planar embedding growth with good reproducibility by a method wherein the uppermost layer and the layer just under the uppermost layer are formed as InGaAsP layers, which differ in composition, in a first liquid phase epitaxial growth process and after a striped groove is formed, the InGaAsP layer only, which is the uppermost layer, is removed and thereafter, a second liquid phase epitaxial growth process is performed. CONSTITUTION:The uppermost layer and the layer just under the uppermost layer are formed as InGaAsP layers 106 and 105, which differ in composition, in a first liquid phase epitaxial growth process and after a striped groove is formed using a photolithography technique in a groove forming process that follows, the InGaAsP layer 106 only which is the uppermost layer of the two InGaAsP layers 106 and 105, which differ in composition, is removed and thereafter, a second liquid phase epitaxial growth process that follows is performed. Thereby, when a double hetero structure including the InGaAsP active layer is buried and grown in an InP substrate 1 comprising the groove formed therein by a liquid phase epitaxial growth, the deformation of the groove is never caused by just putting another InP substrate for protection on the substrate without controlling specially the vapor pressure of P atoms and a good embedding growth becomes possible. |
| 公开日期 | 1988-08-30 |
| 申请日期 | 1987-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87914]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | HIRAYAMA NORIYUKI,IDOTA TAKESHI,OSHIMA MASAAKI. Production of semiconductor laser. JP1988209189A. 1988-08-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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