Semiconductor laser device
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; KONO TOSHIHIRO; KAYANE NAOKI; KAJIMURA TAKASHI |
| 发表日期 | 1987-11-09 |
| 专利号 | JP1987256489A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having return light noise not depending upon the amount of return light, and having relative noise strength of 1X10Hz or below by a method wherein current constriction of the element is performed using layers of a conductivity type opposite to that of a substrate and formed to the substrate provided previously with recesses, and especially the recesses are formed wholly with sides having the angles within the 45 degrees form the direction. CONSTITUTION:The whole of the recesses of a substrate are formed by sides having the angles within the 45 degrees from the direction. Namely the shape of the recesses is formed in the type as shown in the figure, and then grooves 4 to be used as waveguides are formed. At this stage, only the grooves of 2-4mum width are formed in the part of a region 1, and at a region 2, grooves 2-4mum width continuously connected to the grooves of the region 1, and regions provided at the positions separated by 1-5mum from the edges of the grooves and recessed from the surface of the substrate are formed. After then, a P-type GaAlAs clad layer 5, an undoped GaAlAs active layer 6, an N-type GaAlAs clad layer 7 and an N-type GaAs cap layer 8 are grown in order, then after an AuGeNi/Cr/Au electrode 9 and a Cr/Au electrode 10 are deposited, a reflecting surface is formed. |
| 公开日期 | 1987-11-09 |
| 申请日期 | 1986-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87917]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,KONO TOSHIHIRO,KAYANE NAOKI,et al. Semiconductor laser device. JP1987256489A. 1987-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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