Semiconductor laser element
文献类型：专利
| 作者 | IWAI NORIHIRO; MATSUMOTO SHIGETO |
| 发表日期 | 1992-10-28 |
| 专利号 | JP1992305991A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To achieve a low cost and a high yield with the fabrication of a semiconductor laser element at a single crystal growth by superposing an active layer, which is constituted of a strain quantum well, on each of a plurality of ridges which are formed, differently from one another in width, on a semiconductor substrate. CONSTITUTION:Ridges 12a, 12b, 12c, and 12d are formed, differently from one another in width, on a substrate 1 Sequentially grown over the substrate are, in order, a cladding layer 13, an active layer 14 which is constituted of a triple strain quantum well, a cladding layer 15, and a contact layer 16. Then, the ridges 12a, 12b, 12c, and 12d are separated from one another by preparing, between them, grooves deep enough to reach the cladding layer 13. The SiNx layer 17 is further laid over the entirety of the uppermost layer. After the removal of the SiNx layer from the top of each ridge, that is, 12a, 12b, 12c, and 12d, both sides of the substrate are coated with electrode layers 18 and 19, respectively, whereby a semiconductor layer element can be fabricated at lower cost and higher yield. |
| 公开日期 | 1992-10-28 |
| 申请日期 | 1991-04-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87920]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IWAI NORIHIRO,MATSUMOTO SHIGETO. Semiconductor laser element. JP1992305991A. 1992-10-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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