Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | OKUDA HAJIME; ISHIKAWA MASAYUKI; SHIOZAWA HIDEO |
| 发表日期 | 1990-08-15 |
| 专利号 | JP1990206191A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To simplify the structure of the lateral-mode controlled InGaA P semiconductor laser of the title device and improve the yield of the laser by incorporating a diffraction grating in the laser. CONSTITUTION:An n-GaAs substrate 10, n-In0.5(Ga0.3A0.7)0.5P clad layer 11, non- doped lnGaP active layer 12, p-In0.5(Ga0.7A0.3)0.5P optical waveguide layer 13, current blocking layer 14, p-In0.5(Ga0.3A0.7)0.5P clad layer 15, p-GaAs contact layer 16, and diffraction grating 17 are provided. Since the built in diffraction grating 17 amplifies only rays of light in the direction of a resonator, a lateral- mode controlled laser which stably oscillates in a single longitudinal mode can be obtained. Therefore, a laser which is simple in structure and has good characteristics can be obtained in high yield. |
| 公开日期 | 1990-08-15 |
| 申请日期 | 1989-02-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87925]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | OKUDA HAJIME,ISHIKAWA MASAYUKI,SHIOZAWA HIDEO. Semiconductor laser device and manufacture thereof. JP1990206191A. 1990-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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