Semiconductor element electrode
文献类型：专利
| 作者 | KONNO KUNIAKI; CHINEN YUKIO |
| 发表日期 | 1988-04-26 |
| 专利号 | JP1988095661A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element electrode |
| 英文摘要 | PURPOSE:To increase adhesion between an electrode and a semiconductor substrate, to improve workability and to enhance reliability by forming an Au or Au alloy layer adjacent to the semiconductor substrate with an active or passive element. CONSTITUTION:An electrode functioning as a pad is shaped continuously through a vacuum deposition method using the so-called E-gun. The perforated pattern of a resist is formed to an InGaAsP substrate 1 to which an element is shaped, the substrate is set into a vacuum deposition device using the degree of vacuum of 2X10 torr as a lower limit, and an Au layer 2 in 500Angstrom , a Ti layer 3 in 1000Angstrom , a Pt layer 4 in 1000Angstrom and an Au layer 5 in 5000Angstrom are laminated in succession. Heat treatment is executed in an inert (N2) atmosphere held at 400-450 deg.C, an electrode is also formed on the rear side of the InGaAsP substrate 1, and a plurality of the metallic layers laminated are over-coated with Au 6 in 5000Angstrom , thus shaping a semiconductor element electrode. |
| 公开日期 | 1988-04-26 |
| 申请日期 | 1986-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87926]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KONNO KUNIAKI,CHINEN YUKIO. Semiconductor element electrode. JP1988095661A. 1988-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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