Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI |
| 发表日期 | 1989-11-20 |
| 专利号 | JP1989287985A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To effectively suppress a leakage current by isolating an N-type InP buried layer by a first P-type InP buried layer, a P-type InP separating layer and a second P-type InP buried layer. CONSTITUTION:A mesa stripe structure 20 formed in a laminated layer structure is buried with a first P-type InP buried layer 15, an N-type InP buried layer 16 thereon, and a second P-type InP buried layer 17 thereon. In this case, the layers 15, 16 are limited to both sides of the structure 20, the layer 15 is in contact with a P-type InP separating layer 22, and the layer 17 covers the upper face of the structure 20. A stripe groove 23 which passes the layers 17 and 22 is formed, and buried with an N-type InP clad layer 18. Thus, it can effectively suppress the leakage current of a buried semiconductor light emitting device having an InGaAsP active layer 13 on a P-type InP board 1 |
| 公开日期 | 1989-11-20 |
| 申请日期 | 1988-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87927]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI. Manufacture of semiconductor light emitting device. JP1989287985A. 1989-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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