Semiconductor laser having improved facets of the resonator
文献类型：专利
| 作者 | YOSHIDA, YASUAKI; NAKAGAWA, YASUYUKI |
| 发表日期 | 2007-09-13 |
| 专利号 | US20070211776A1 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser having improved facets of the resonator |
| 英文摘要 | In a semiconductor laser having a first facet (front facet) through which laser light is emitted and a second facet (rear facet), and a first coating film composed of a single-layer dielectric film on the first facet. The oscillating wavelength of the laser light is λ and the refractive index of the dielectric film is n. The thickness of the dielectric film is within a range between 5% and 50% of λ/4n. |
| 公开日期 | 2007-09-13 |
| 申请日期 | 2007-03-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87934]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | YOSHIDA, YASUAKI,NAKAGAWA, YASUYUKI. Semiconductor laser having improved facets of the resonator. US20070211776A1. 2007-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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