Passivation for algaas layer
文献类型：专利
| 作者 | TANAKA HARUO; NAKADA NAOTARO; MUSHIGAMI MASAHITO |
| 发表日期 | 1987-04-30 |
| 专利号 | JP1987093948A |
| 著作权人 | ロ-ム株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Passivation for algaas layer |
| 英文摘要 | PURPOSE:To prevent the surface of an AlGaAs layer from being deteriorated due to oxidation by a method wherein, when the manufacture of a semiconductor element is temporarily suspended after forming to an AlxGa1-xAs clad layer on the way that the element is formed laminating a GaAs layer, the AlGaAs layer and so on, the surface of the GlGaAs layer is held being covered with the GaAs layer of a thickness of 10-200Angstrom . CONSTITUTION:An N-type Al0.6Ga0.4As layer clad layer 21, an Al0.15Ga0.85As active layer 22 and a P-type Al0.6Ga0.4As upper clad layer 23 are laminated in order on an N-type GaAs substrate 10. Then, a P-type GaAs layer 30 having its film thickness formed into a thickness of 10-200Angstrom is grown on this layer 23, an N-type GaAs current limiting layer 24 is laminated on this layer 30 and the first laminating work is finished. Thereafter, the substrate 10 is taken out once outside a device and is etched using a resist mask and a striped groove is bored in the layer 24, but at this time, the surface of the P-type AlxGa1-xAs clad layer (0 |
| 公开日期 | 1987-04-30 |
| 申请日期 | 1985-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87943]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ロ-ム株式会社 |
| 推荐引用方式 GB/T 7714 | TANAKA HARUO,NAKADA NAOTARO,MUSHIGAMI MASAHITO. Passivation for algaas layer. JP1987093948A. 1987-04-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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