Semiconductor laser
文献类型：专利
| 作者 | MORIKI KAZUNORI; OOSAWA JIYUN; IKEDA KENJI; SUZAKI WATARU |
| 发表日期 | 1985-01-28 |
| 专利号 | JP1985016484A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate the manufacture of the titled device and thus facilitate the electric isolation of active media by a method wherein the optical coupling between active wave guides by the variation of the shape of the active wave guide. CONSTITUTION:A wave guide layer 2 and active layers 1a-1c are formed on a semiconductor substrate crystal 3, and the active layers 1a-1c are constructed in rectangles and form the active wave guides together with the wave guide 2. Electrodes 5 and 6 injecting currents to the active wave guides are provided, and resonator end surfaces 7 and 8 reflecting lights guided to the active layers 1a-1c and the wave guide layer 2 are provided. A diffraction grating 9 is formed on the side surface of each active layer 1a-1c, resulting in the shape with parallel lines cut in respective opposing surfaces. Laser oscillation is caused from the layers 1a-1c by the current injected through the electrodes of such a structure, and then a part of light is picked up into the active wave guides through the diffraction gratings 9 at the side surfaces of the respective layers 1a-1c, which light is then propagated through the wave guides. Accordingly, the electric isolation of the active media is facilitated by the facilitation of the manufacture of the titled device. |
| 公开日期 | 1985-01-28 |
| 申请日期 | 1983-07-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87950]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | MORIKI KAZUNORI,OOSAWA JIYUN,IKEDA KENJI,et al. Semiconductor laser. JP1985016484A. 1985-01-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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