半導体レーザ装置
文献类型：专利
| 作者 | 足立 明宏 |
| 发表日期 | 1995-09-20 |
| 专利号 | JP1995087256B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To reduce output fluctuation by setting the position of the incident end face of a light waveguide path to become the reflecting point of an outgoing beam, shifting it from the position where the length of a light path between this incident end face and a semiconductor laser becomes an integral multiple of the length of the light path of the resonator of a semiconductor laser. CONSTITUTION:The position of the incident end face 5 of a light guide wave path 4 to become the reflecting point of the outgoing beam of a semiconductor laser 1 is set being shifted from the position where the length Le of a light path between this incident end face 5 and the semiconductor laser 1 becomes an integral multiple of the length L1 of the light path of the resonator of the semiconductor laser Accordingly, for the laser beam reflected at the incident end face 5 of the light waveguide path 4 and the outgoing beam 2 of the semiconductor laser 1 being excited in a multimode, the phases of all modes never become equal between the incident end face 5 and the semiconductor laser 1, and the interference is relaxed. Hereby, the output fluctuation can be reduced. |
| 公开日期 | 1995-09-20 |
| 申请日期 | 1989-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87952]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 足立 明宏. 半導体レーザ装置. JP1995087256B2. 1995-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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