Semiconductor laser element
文献类型：专利
| 作者 | YAMASHITA SHIGEO; ONO YUICHI; YAMANAKA AKEMI; TANAKA TOSHIAKI; KAJIMURA TAKASHI |
| 发表日期 | 1988-12-27 |
| 专利号 | JP1988318184A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To make the face adjacent to a resonator reflecting face flat so as to obtain an excellent resonator reflecting face by a method wherein an element of this design has such a structure as a semiconductor layer causing a groove to an element face is also provided adjacent to a resonator reflecting face. CONSTITUTION:An n-GaAs buffer layer 8 and an n-Ga0.5Al0.5As clad layer are provided on an n-GaAs substrate A current constriction layer 12 is formed thereon which is structured in such a manner that a stripe-like opening such as provided at the central part is not formed in the region adjacent to a resonator reflecting face. Moreover, a p-type Ga0.6Al0.4As transparent layer 13 and a p-GaAs cap layer 14 are built thereon. In such a structure as mentioned above, the photoresist film used for a dry etching of the resonator reflecting face is improved in linearity and processing quality. |
| 公开日期 | 1988-12-27 |
| 申请日期 | 1987-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87954]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,ONO YUICHI,YAMANAKA AKEMI,et al. Semiconductor laser element. JP1988318184A. 1988-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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